Motorola, alldatasheet, datasheet, datasheet search site for electronic components and. Bd244c high power bipolar transistor page 2 050808 v1. D718 datasheet vcbo120v, 8a, npn transistor toshiba. They are designed for audio amplifiers and drivers utilizing complementary or quasicomplementary circuits. Bc637 high current npn transistors on semiconductor.
The compound will withstand soldering temperature with no deformation, and circuit performance. Fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. The device is housed in the to92 package, which is designed for medium power applications. Base npn epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted symbol parameter value units vcer collectoremitter voltage at rbe1k. Posted on november 7, 2018 september 9, 2019 by pinout. Toshiba transistor silicon pnp epitaxial type pct process. Collector currentcontinuous collector currentpeak base currentcontinuous collector power dissipation. Scr handbook, rca hc2000h rca transistor npn a rca t2850d 40659 npn transistor rca 467 b0241c triac t6440m diac d3202u text. A, february 2000 bd579 1 to126 npn epitaxial silicon transistor absolute maximum ratings tc25c unless otherwise noted.
R high dc current gain high breakdown voltage low pulse noise, low 1 f noise unit in mm. B2, december 2002 bc635637639 npn epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted pw5ms, duty cycle10%. Bc bc bc q a bc datasheet, bc pdf, bc data sheet, datasheet, data sheet, pdf, continental device india limited, w general purpose npn plastic leaded. Toshiba transistor silicon npn epitaxial type pct process 2sc2482 highvoltage switching and amplifier applications color tv horizontal driver applications color tv chroma output applications high breakdown voltage. Motorola smallsignal transistors, fets and diodes device data. This datasheet contains the design specifications for.
This datasheet contains the design specifications for product development. Npn medium power transistor series in surfacemounted device smd plastic. Bf467 datasheet, cross reference, circuit and application notes in pdf format. Complementary low voltage transistor stmicroelectronics. Bd679 datasheet, equivalent, cross reference search. Npn epitaxial planar transistor bd679a description the bd679a is a npn darlington transistor, designed for general purpose amplifier and low speed switching application. Complementary low voltage transistor features products are preselected in dc current gain application general purpose description these epitaxial planar transistors are mounted in the sot32 plastic package. Bd9 datasheet pdf vcbo80v, npn transistor st, bd9 pdf, bd9 pinout, bd9 equivalent, bd9 circuit, bd9 transistor, bd9 schematic. Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. Vceo12v maximum ratings ta 25c characteristic collectorbase voltage. Semiconductor transistor, diode, ic cross reference. Recent listings manufacturer directory get instant. Npn silicon af transistors bc 635 datasheet catalog.
D718 datasheet pdf, d718 datasheet, d718 pdf, d718 pinout, d718 data, d718 circuit, d718 transistor, d718 manual, d718 substitute, d718 schematic. Bd645, bd647, bd649, bd651 npn silicon power darlingtons product information to220 3pin plastic flangemount packag e this singleinline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The datasheet is printed for reference information only. Bd829 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these. Bc639 cross reference electronic circuits, tv schematics. A, february 2000 bd579 1 to126 npn epitaxial silicon transistor absolute maximum ratings tc25c unless otherwise noted electrical characteristics tc25c unless otherwise noted hfe classification symbol parameter value units.
Designed for complementary use with the bd244 series at 25c case temperature 6 a continuous collector current 10 a peak collector current customerspecified selections available. Toshiba transistor silicon npn epitaxial type pct process. Productrank a733r a733q a733p a733k range 90180 5270 200400 300600 absolute maximum ratings t a 25c unless otherwise specified parameter symbol rating unit collector to base voltage vcbo60 v collector to emitter voltage vceo50 v emitter to base voltage vebo5 v collector current continuous ic100 ma. Posted on february 1, 2016 september 18, 2019 by pinout. A1, june 2001 bd233235237 npn epitaxial silicon transistor absolute maximum ratings tc25c unless otherwise noted electrical characteristics tc25c unless otherwise noted. Bd679 complementary silicon power darlington transistors, bd679, stmicroelectronics.
Sep 18, 2019 bd9 datasheet pdf vcbo80v, npn transistor st, bd9 pdf, bd9 pinout, bd9 equivalent, bd9 circuit, bd9 transistor, bd9 schematic. Siemens datasheet pdf high current transistors rev. Electronic manufacturer, part no, datasheet, electronics description. See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Licensee shall dahasheet this agreement and the content bd639 on semiconductors confidential information including. Bc639 datasheet, equivalent, cross reference search. B561 datasheet, b561 pdf, b561 data sheet, datasheet, data sheet, pdf. Npn triple diffused planar silicon transistor 400v7a switching regulator applications ordering number. D2012 datasheet vcbo60v, npn transistor toshiba, 2sd2012 datasheet, d2012 pdf, d2012 pinout, d2012 manual, d2012 schematic, d2012 equivalent. This npn bipolar transistor is designed for use in industrial and consumer applications.
Product specification npn medium power transistors bc635. A733 pnp epitaxial silicon transistor elite enterprises h. No licence is granted for the use of it other than for information purposes in connection with. Ic cross reference cross reference ci stk cross reference ci tda cross reference ci sharp cross reference hitachi audio ic cross reference and circuit applications smd cross reference and equivalent we make every effort to ensure that the material on this site is accurate, however we do not warrant or represent that the information is free. B0239c, datasheet, cross reference, circuit and application notes in pdf format. Bc639 datasheet, bc639 pdf, bc639 data sheet, bc639 manual, bc639 pdf, bc639, datenblatt, electronics bc639, alldatasheet, free, datasheet, datasheets, data sheet. Bc635637639 npn epitaxial silicon transistor solo electronica. High bv ceo low v cesat high current gain monolithic construction with builtin baseemitter shunt resistors pbfree lead plating package. Toshiba transistor silicon pnp epitaxial type pct process 2sa10 color tv verttical deflection output applications power switching applications high voltage. Bc635637639 npn epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted pw5ms, duty cycle10% electrical characteristics ta25c unless otherwise noted symbol parameter value units. High current transistors, bc639 datasheet, bc639 circuit, bc639 data sheet.
Toshiba transistor silicon npn epitaxial type pct process 2sc2383 color tv vertical deflection output applications color tv classb sound output applications high breakdown voltage. Bc287 silicon pnp audio amplifier transistor in a to39 can by motorola. Bc287 silicon pnp transistor by motorola,download sgs bc287 datasheet. This data sheet and its contents the information belong to the members of the premier farnell group of companies the group or are licensed to it. Free devices absolute maximum ratings tc 25c unless otherwise noted rating symbol max unit collector. Discover our darlington transistor portfolio available with a voltage range up to 400 v, with both npn and pnp polarity. Nov 07, 2018 d2012 datasheet vcbo60v, npn transistor toshiba, 2sd2012 datasheet, d2012 pdf, d2012 pinout, d2012 manual, d2012 schematic, d2012 equivalent. Dec 22, 2018 bipolar bjt transistor npn 80v 1a mhz mw through hole to features.
Specifications may change in any manner without notice. Bc63916 switching and amplifier applications to92 1 1. C639 datasheet, c639 pdf, c639 data sheet, datasheet, data sheet, pdf. Toshiba transistor silicon pnp epitaxial type pct process 2sa970 low noise audio amplifier applications low noise. Free devices maximum ratings rating symbol value unit collector emitter voltage bc637 bc639 vceo 60 80 vdc collector base voltage bc637 bc639 vcbo 60 80 vdc emitter base voltage vebo 5. Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a. Upon the effective date of termination of this agreement, all licenses granted to licensee hereunder shall terminate and licensee shall cease all use, copying, modification and distribution of the content and shall promptly either destroy or return to on semiconductor all copies of the. Bc639 datasheet, bc639 pdf, bc639 data sheet, datasheet, data sheet, pdf, continental. Motorola, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Features complementary to 2sa965 maximum ratings t b a b 25. Bc637, bc639, bc63916 high current transistors npn silicon features these are pb. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. Transistor bd6 series bd6 bd8 bd140 applications complement to bd5, bd7 and bd9 respectively these are pb.
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